IPW60R045CP Infineon Technologies, IPW60R045CP Datasheet

MOSFET N-CH 650V 60A TO-247

IPW60R045CP

Manufacturer Part Number
IPW60R045CP
Description
MOSFET N-CH 650V 60A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of IPW60R045CP

Package / Case
TO-247-3 (Straight Leads)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 44A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
3.5V @ 3mA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 100V
Power - Max
431W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.045 Ohm @ 10 V
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
60 A
Power Dissipation
431000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
60A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
45mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPW60R045CP
IPW60R045CPIN
IPW60R045CPXK
IPW60R045CSX
SP000067149

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPW60R045CP
Manufacturer:
INFINEON
Quantity:
2 000
Part Number:
IPW60R045CP
Manufacturer:
INFINEON
Quantity:
8 000
Part Number:
IPW60R045CP
Manufacturer:
ST
0
Part Number:
IPW60R045CP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IPW60R045CP
Quantity:
1 200
Part Number:
IPW60R045CPA
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 2.2
Features
• Worldwide best R
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
CoolMOS
Type
IPW60R045CP
®
Power Transistor
ds,on
2)
Package
PG-TO247-3-1
in TO247
j
=25 °C, unless otherwise specified
AR
AR
1)
2),3)
2),3)
for target applications
Symbol Conditions
I
I
E
E
I
dv /dt
V
P
T
D
D,pulse
AR
j
AS
AR
GS
tot
, T
Ordering Code
SP000067149
stg
T
T
T
I
I
V
static
AC (f >1 Hz)
T
M3 and M3.5 screws
D
D
page 1
C
C
C
C
DS
=11 A, V
=11 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=0...480 V
DD
DD
Marking
6R045
=50 V
=50 V
Product Summary
V
R
Q
DS
DS(on),max
g,typ
@ T
jmax
-55 ... 150
Value
1950
230
±20
±30
431
60
38
11
50
60
3
PG-TO247-3-1
IPW60R045CP
0.045 Ω
650
150
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
V
nC
2008-01-21

Related parts for IPW60R045CP

IPW60R045CP Summary of contents

Page 1

... Symbol Conditions I T =25 ° =100 ° =25 °C D,pulse = = 2 2), =0...480 static >1 Hz =25 °C tot stg M3 and M3.5 screws page 1 IPW60R045CP @ T 650 jmax 0.045 Ω 150 PG-TO247-3-1 Value Unit 230 1950 V/ns ±20 V ±30 431 W -55 ... 150 °C 60 Ncm V nC 2008-01-21 ...

Page 2

... D V =600 DSS T =25 ° =600 =150 ° = GSS = = DS(on) T =25 ° = = =150 ° MHz, open drain G page 2 IPW60R045CP Value Unit 44 A 230 15 V/ns Values Unit min. typ. max 0.29 K 260 °C 600 - - V 2 µ 100 nA 0.045 Ω - 0.04 - 0.11 - Ω ...

Page 3

... R d(off =400 plateau = =25 ° =400 /dt =100 A/µ rrm = 400V, V peak< <T , identical low side and high side switch (BR)DSS j jmax oss oss page 3 IPW60R045CP Values min. typ. max. - 6800 - - 320 - - 310 - - 820 - - 100 - - 150 190 - 5 0.9 1.2 - 600 - , ...

Page 4

... Rev. 2.2 2 Safe operating area I =f parameter 120 160 [° Typ. output characteristics I =f parameter: V 250 200 150 100 [s] p page 4 IPW60R045CP ); T =25 ° limited by on-state resistance 2 100 µ [ =25 ° µs 1 µ 2008-01-21 ...

Page 5

... Typ. drain-source on-state resistance R =f(I DS(on) parameter 0.12 5 4 Typ. transfer characteristics I =f parameter: T 320 280 240 200 160 120 typ 100 140 180 0 [°C] j page 5 IPW60R045CP ); T =150 ° 5 [A] D |>2 DS(on)max j C °25 C °150 [ 6 100 10 2008-01-21 ...

Page 6

... Forward characteristics of reverse diode I =f parameter 120 400 100 150 [nC] 12 Drain-source breakdown voltage V =f(T BR(DSS) 700 660 620 580 540 100 140 180 -60 [°C] j page 6 IPW60R045CP j 150 °C, 98% 25 °C 150 °C 25 °C, 98% 0.5 1 1 =0. - 100 140 T [° 180 2008-01-21 ...

Page 7

... Typ. capacitances C =f MHz Ciss Coss Crss 100 200 V Rev. 2.2 14 Typ. Coss stored energy E = f(V oss 300 400 500 0 [V] DS page 7 IPW60R045CP ) 100 200 300 400 500 V [V] DS 600 2008-01-21 ...

Page 8

... Definition of diode switching characteristics Rev. 2.2 page 8 IPW60R045CP 2008-01-21 ...

Page 9

... PG-TO-247-3: Outlines Rev. 2.2 page 9 IPW60R045CP 2008-01-21 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 10 IPW60R045CP 2008-01-21 ...

Related keywords