SPW32N50C3 Infineon Technologies, SPW32N50C3 Datasheet - Page 6

• Manufacturer Part Number: SPW32N50C3
• Description: MOSFET N-CH 560V 32A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW32N50C3

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 3.9V @ 1.8mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 25V
• Power - Max: 284W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohm @ 10 V
• Drain-source Breakdown Voltage: 560 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 32 A
• Power Dissipation: 284000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 32A
• Drain Source Voltage Vds: 560V
• On Resistance Rds(on): 110mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014625; SPW32N50C3; SPW32N50C3IN; SPW32N50C3X; SPW32N50C3XK

Please note the new package dimensions arccording to PCN 2009-134-A
5 Typ. output characteristic
I
parameter: t
7 Drain-source on-state resistance
R
parameter : I
Rev. 2.5
D
DS(on)
= f ( V
0.65
0.55
0.45
0.35
0.25
0.15
0.05
Ω
A
0.5
0.4
0.3
0.2
0.1
80
40
20
0
0
-60
0
SPW32N50C3
DS
= f (T
); T
-20
p
D
j
= 10 µs, V
5
)
j
= 20 A, V
=150°C
20
98%
10
typ
60
GS
GS
Vgs = 20V
Vgs = 5.5V
Vgs = 6V
15
= 10 V
100
V
°C
Vgs = 4.5V
Vgs = 5V
Vgs = 4V
V
T
DS
j
180
25
Page 6
6 Typ. drain-source on resistance
R
parameter: T
8 Typ. transfer characteristics
I
parameter: t
D
DS(on)
= f ( V
160
120
100
1.6
1.4
1.2
0.8
0.6
0.4
0.2
Ω
A
80
60
40
20
2
1
0
0
0
0
= f (I
Vgs = 4V
GS
1
10
D
); V
)
p
j
=150°C, V
2
= 10 µs
20
DS
Vgs = 4.5VVgs = 5V
3
≥ 2 x I
30
4
40
D
GS
5
x R
Tj = 25°C
SPW32N50C3
6
Vgs = 5.5V
50
DS(on)max
7
60
2008-02-11
8
Tj =150°C
I
D
I
V
V
D
GS
Vgs = 20
80
10