SPW32N50C3 Infineon Technologies, SPW32N50C3 Datasheet - Page 3

• Manufacturer Part Number: SPW32N50C3
• Description: MOSFET N-CH 560V 32A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW32N50C3

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 3.9V @ 1.8mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 25V
• Power - Max: 284W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohm @ 10 V
• Drain-source Breakdown Voltage: 560 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 32 A
• Power Dissipation: 284000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 32A
• Drain Source Voltage Vds: 560V
• On Resistance Rds(on): 110mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014625; SPW32N50C3; SPW32N50C3IN; SPW32N50C3X; SPW32N50C3XK

Please note the new package dimensions arccording to PCN 2009-134-A
Electrical Characteristics , at T
Parameter
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1 Repetitve avalanche causes additional power losses that can be calculated as P
2 C
3 C
4 I
Identical low-side and high-side switch.
Rev. 2.5
SD
o(er)
o(tr)
<
=I
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same stored energy as C
D
, di/dt<=200A/us, V
DClink
=400V, V
2)
3)
Symbol
g
C
C
C
C
C
t
t
t
t
Q
Q
Q
V
d(on)
r
d(off)
f
j
fs
(plateau)
iss
oss
rss
o(er)
o(tr)
gs
gd
g
= 25 °C, unless otherwise specified
peak
<V
BR, DSS
V
I
V
f=1MHz
V
V
V
I
V
V
V
V
D
D
Page 3
DD
DD
GS
DD
DS
GS
GS
DS
DD
=20A
=32A, R
≥ 2* I
=0V, V
=0V,
=0V to 400V
=380V, V
=380V, I
=380V, I
=0 to 10V
=380V, I
Conditions
, T
D
j
<T
* R
G
DS
=2.7 Ω
DS(on)max
j,max
D
D
D
GS
=25V,
=32A
=32A,
=32A
=0/10V,
.
oss
oss
while V
while V
,
min.
DS
DS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AV
is rising from 0 to 80% V
is rising from 0 to 80% V
=E
Values
AR
4200
1700
181
350
typ.
100
170
*f.
30
90
20
30
10
15
90
5
SPW32N50C3
max.
2008-02-11
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
V
Unit
S
pF
pF
ns
DSS
DSS
.
.