IPP200N25N3 G Infineon Technologies, IPP200N25N3 G Datasheet - Page 3

• Manufacturer Part Number: IPP200N25N3 G
• Description: MOSFET N-CH 250V 64A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP200N25N3 G

• Package / Case: TO-220-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 64A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 4V @ 270µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 7100pF @ 100V
• Power - Max: 300W
• Mounting Type: Through Hole
• Gate Charge Qg: 64 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Forward Transconductance Gfs (max / Min): 122 S, 61 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 64 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPP200N25N3GXK

Rev. 2.3
4)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
See figure 16 for gate charge parameter definition
4)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
V
Q
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
plateau
SD
iss
oss
rss
gs
gd
sw
g
oss
rr
V
f =1 MHz
V
V
R
V
V
V
T
V
T
V
di
C
j
GS
DD
GS
DD
GS
DD
GS
R
G
=25 °C
F
page 3
=25 °C
=100 V, I
/dt =100 A/µs
=1.6
=0 V, V
=100 V,
=10 V, I
=100 V, I
=0 to 10 V
=100 V, V
=0 V, I
F
DS
=64 A,
D
F
=25 A,
=25 A,
D
=100 V,
GS
=25 A,
=0 V
IPB200N25N3 G
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
5340
typ.
297
135
170
780
4.2
18
20
45
12
22
13
64
4
7
1
-
-
IPP200N25N3 G
IPI200N25N3 G
max.
7100
395
179
256
1.2
86
64
-
-
-
-
-
-
-
-
-
-
-
2010-10-19
Unit
pF
ns
nC
V
nC
A
V
ns
nC