IPP200N25N3 G Infineon Technologies, IPP200N25N3 G Datasheet
IPP200N25N3 G
Specifications of IPP200N25N3 G
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IPP200N25N3 G Summary of contents
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... IPP200N25N3 G PG-TO220-3 200N25N Symbol Conditions I T =25 ° =100 ° =25 °C D,pulse = = =25 °C tot stg page 1 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Product Summary DS(on),max I D IPI200N25N3 G PG-TO262-3 200N25N Value 64 46 256 320 ±20 300 -55 ... 175 55/175/56 250 Unit °C 2010-10-19 ...
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... =270 µA GS(th =200 DSS T =25 ° =200 =125 ° = GSS = =64 A DS(on |>2 DS(on)max = (one layer, 70 µm thick) copper area for drain page 2 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Values min. typ. max 0 250 - 0 100 = 100 - 17 2 122 Unit K µ 2010-10-19 ...
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... DS C oss f =1 MHz C rss t d(on) V =100 = = =1.6 d(off =100 plateau Q V =100 oss =25 ° S,pulse = =25 ° =100 /dt =100 A/µ page 3 IPP200N25N3 G IPI200N25N3 G Values Unit min. typ. max. - 5340 7100 pF - 297 395 - 4 135 179 256 - 1 1 170 - ns - 780 - nC 2010-10-19 ...
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... Safe operating area I =f =25 ° parameter Rev. 2.3 2 Drain current I =f 150 200 4 Max. transient thermal impedance Z =f(t thJC parameter µs 10 µs 100 µ [V] page 4 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 100 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 150 200 - 2010-10-19 ...
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... DS(on)max parameter 140 120 100 175 ° Rev. 2.3 6 Typ. drain-source on resistance R =f(I DS(on) parameter 4 [V] 8 Typ. forward transconductance g =f 180 160 140 120 100 ° [V] page 5 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 =25 ° 4 100 I [ =25 ° [ 120 140 100 125 2010-10-19 ...
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... I 4 3.5 3 2.5 2 1.5 typ 1 0.5 0 100 140 180 12 Forward characteristics of reverse diode I =f parameter Ciss 120 160 [V] page 6 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 2700 µA 270 µA -60 - 100 T [° 175 °C 25°C, 98% 175°C, 98% 25 ° [V] SD 140 180 1.5 2 2010-10-19 ...
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... Avalanche characteristics parameter: T j(start) 15 Drain-source breakdown voltage V =f BR(DSS 290 280 270 260 250 240 230 220 -60 - [°C] j IPB200N25N3 G 14 Typ. gate charge V =f gate parameter Gate charge waveforms 100 140 180 IPP200N25N3 G IPI200N25N3 G =25 A pulsed D DD 200 V 125 [nC] gate 80 ...
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... PG-TO220-3: Outline Rev. 2.3 IPB200N25N3 G page 8 IPP200N25N3 G IPI200N25N3 G 2010-10-19 ...
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... PG-TO263-3: Outline Rev. 2.3 IPB200N25N3 G page 9 IPP200N25N3 G IPI200N25N3 G 2010-10-19 ...
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... PG-TO262-3: Outline Rev. 2.3 IPB200N25N3 G page 10 IPP200N25N3 G IPI200N25N3 G 2010-10-19 ...
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... Rev. 2.3 IPB200N25N3 G page 11 IPP200N25N3 G IPI200N25N3 G 2010-10-19 ...