IPB038N12N3 G Infineon Technologies, IPB038N12N3 G Datasheet - Page 6

• Manufacturer Part Number: IPB038N12N3 G
• Description: MOSFET N-CH 120V 120A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB038N12N3 G

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 120V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 270µA
• Gate Charge (qg) @ Vgs: 211nC @ 10V
• Input Capacitance (ciss) @ Vds: 13800pF @ 60V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Gate Charge Qg: 158 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.8 mOhms
• Forward Transconductance Gfs (max / Min): 165 S, 83 S
• Drain-source Breakdown Voltage: 120 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPB038N12N3 G; IPB038N12N3 GTR

Rev. 2.2
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
10
DS
=f(T
8
6
4
2
0
-60
5
4
3
2
1
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=100 A; V
20
20
Crss
Coss
Ciss
98 %
40
GS
V
T
=10 V
j
DS
60
[°C]
[V]
typ
60
100
80
140
100
180
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
3.5
2.5
1.5
0.5
10
10
10
10
=f(T
SD
4
3
2
1
0
3
2
1
0
-60
)
0
j
); V
D
IPP041N12N3 G
j
GS
-20
=V
0.5
DS
175 °C
20
270 µA
V
T
SD
j
60
[°C]
1
[V]
25 °C, 98%
2700 µA
25 °C
IPB038N12N3 G
100
IPI041N12N3 G
1.5
140
175 °C, 98%
2009-07-16
180
2