IPB038N12N3 G Infineon Technologies, IPB038N12N3 G Datasheet - Page 5

• Manufacturer Part Number: IPB038N12N3 G
• Description: MOSFET N-CH 120V 120A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB038N12N3 G

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 120V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 270µA
• Gate Charge (qg) @ Vgs: 211nC @ 10V
• Input Capacitance (ciss) @ Vds: 13800pF @ 60V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Gate Charge Qg: 158 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.8 mOhms
• Forward Transconductance Gfs (max / Min): 165 S, 83 S
• Drain-source Breakdown Voltage: 120 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPB038N12N3 G; IPB038N12N3 GTR

Rev. 2.2
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
400
320
240
160
300
250
200
150
100
80
50
DS
GS
0
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
|>2|I
10 V
1
2
D
6.5 V
7 V
|R
DS(on)max
4.5 V
6 V
5.5 V
5 V
2
V
V
175 °C
GS
DS
4
[V]
[V]
3
25 °C
6
4
page 5
5
8
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
200
160
120
10
80
40
D
=f(I
9
8
7
6
5
4
3
2
0
); T
0
0
D
j
); T
=25 °C
4.5 V
IPP041N12N3 G
GS
j
=25 °C
50
50
5 V
I
I
D
D
[A]
[A]
IPB038N12N3 G
100
100
IPI041N12N3 G
5.5 V
6 V
10 V
2009-07-16
150
150