SPP11N60C3 Infineon Technologies, SPP11N60C3 Datasheet - Page 10

MOSFET N-CH 650V 11A TO-220AB

SPP11N60C3

Manufacturer Part Number
SPP11N60C3
Description
MOSFET N-CH 650V 11A TO-220AB
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of SPP11N60C3

Package / Case
TO-220AB
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3.9V @ 500µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000013526
SPP11N60C3IN
SPP11N60C3X
SPP11N60C3XIN
SPP11N60C3XIN
SPP11N60C3XK

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21 Avalanche energy
E
par.: I
23 Avalanche power losses
P
parameter: E
Rev.
AS
AR
mJ
W
350
250
200
150
100
300
200
150
100
= f (T
= f (f )
50
50
D
0
0
20
10
= 5.5 A, V
4
3 .2
j
)
40
AR
=0.6mJ
60
DD
80
= 50 V
10
100
5
120
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Hz
°C
T
f
j
160
10
6
Page 10
22 Drain-source breakdown voltage
V
24 Typ. capacitances
C = f (V
parameter: V
(BR)DSS
pF
10
10
10
10
10
720
680
660
640
620
600
580
560
540
V
-60
4
3
2
1
0
0
SPP11N60C3
DS
= f (T
)
C
100
-20
rss
GS
j
)
=0V, f=1 MHz
200
20
C
C
300
60
iss
oss
SPP11N60C3
100
400
2009-11-27
°C
V
T
V
j
DS
180
600

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