BUZ30A Infineon Technologies, BUZ30A Datasheet - Page 7

• Manufacturer Part Number: BUZ30A
• Description: MOSFET N-CH 200V 21A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ30A

• Package / Case: TO-220AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BUZ30AIN; BUZ30AX; BUZ30AXK; BUZ30AXTIN; BUZ30AXTIN; SP000011336

Drain-source on-resistance
R
parameter: I
R
Typ. capacitances
C = f ( V
parameter: V
Rev. 2.3
C
DS (on)
DS (on)
10
0.50
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
10
10
nF
Ω
-1
DS
-60
2
1
0
0
= ƒ ( T
)
GS
D
5
j
)
= 13.5 A, V
-20
= 0V, f = 1MHz
10
20
15
GS
98%
typ
20
60
= 10 V
25
100
30
T
˚C
V
V
j
DS
C
C
C
iss
oss
rss
160
40
Page 7
Forward characteristics of reverse diode
I
parameter: T
Gate threshold voltage
V
parameter: V
V
F
I
GS(th)
F
GS (th)
= ƒ ( V
10
10
10
10
4.6
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
A
-1
V
SD
2
0.0
1
0
-60
= ƒ ( T
)
0.4
j
, t
j
GS
)
-20
p
= V
= 80 µs
0.8
DS
20
1.2
, I
T
T
T
T
j
j
j
j
= 150 ˚C (98%)
D
= 150 ˚C typ
= 25 ˚C (98%)
= 25 ˚C typ
98%
typ
2%
= 1 mA
1.6
60
2.0
100
BUZ 30A
2.4
2009-04-07
V
T
˚C
SD
V
j
3.0
160