BUZ30A Infineon Technologies, BUZ30A Datasheet - Page 6

• Manufacturer Part Number: BUZ30A
• Description: MOSFET N-CH 200V 21A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ30A

• Package / Case: TO-220AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BUZ30AIN; BUZ30AX; BUZ30AXK; BUZ30AXTIN; BUZ30AXTIN; SP000011336

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics
parameter: t
V
Rev. 2.3
D
I
D
I
DS
D
= ƒ( V
≥
2 x I
45
35
30
25
20
15
10
50
40
35
30
25
20
15
10
A
A
5
0
5
0
DS
0
0
D
)
P
tot
p
x R
1
p
= 80 µs
= 125W
= 80 µs
DS(on)max
2
2
3
l
4
4
k
j
i
I
D
5
h
= f ( V
6
g
6
GS
7
8
)
f
8
e
c
a
V
V
d
b
V
V GS [V]
GS
DS
V
a 4.0
b 4.5
c 5.0
d 5.5
e 6.0
f
g 7.0
h 7.5
i
j
k 10.0
l 20.0
6.5
8.0
9.0
10
11
Page 6
Typ. forward transconductance
parameter: t
V
R
g
Typ. drain-source on-resistance
R
parameter: V
fs
DS
DS (on)
DS (on)
≥
2 x I
0.40
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
20
16
14
12
10
S
8
6
4
2
0
Ω
0
0
= ƒ( I
D
V
GS
4.0
a
x R
a
p
4
5
[V] =
= 80 µs,
D
GS
4.5
b
DS(on)max
)
8
10
5.0
c
b
12
5.5
d
15
16
6.0
e
c
6.5
20
f
20
g
7.0
g
fs
24
25
d
= f
7.5
h
28
( I
30
8.0
D
i
BUZ 30A
)
32
9.0
2009-04-07
j
I
l
D
A
e
I
D
10.0
A
k
h
j
f
k
i
40
g
20.0
40
l