SPP80P06P G Infineon Technologies, SPP80P06P G Datasheet
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SPP80P06P G
Specifications of SPP80P06P G
Related parts for SPP80P06P G
SPP80P06P G Summary of contents
Page 1
... Continuous drain current Lead free Yes Yes = 25 °C, unless otherwise specified Symbol puls jmax tot 0.4 K/W the chip is able to carry I thJC Page 1 SPP80P06P G SPB80P06P DS(on Pin 1 PIN 2 Value -80 -64 -320 823 34 6 ±20 340 T -55...+175 stg 55/175/56 = -91A D -60 ...
Page 2
... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 1.4 Symbol °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS = 25 ° 150 ° GSS R DS(on) Page 2 SPP80P06P G SPB80P06P G Values min. typ. max thJC - - thJA thJA - - - - Values min. typ. max. - -0.1 ...
Page 3
... Reverse transfer capacitance - MHz GS DS Turn-on delay time Rise time Turn-off delay time Fall time Rev 1 °C, unless otherwise specified j Symbol - d(on d(off Page 3 SPP80P06P G SPB80P06P G Values min. typ. max 4026 5033 iss - 1252 1565 oss - 437 rss - Unit - S pF 546 2009-11-19 ...
Page 4
... Reverse recovery time 100 A/µ Reverse recovery charge 100 A/µ Rev 1 °C, unless otherwise specified j Symbol - (plateau) Symbol Page 4 SPP80P06P G SPB80P06P G Values min. typ. max 115 173 g - -6.2 Values min. typ. max -320 - -1.2 -1.6 - 117 - 420 rr Unit Unit - 175 ...
Page 5
... Rev 1.4 Drain current parameter: V -90 A -70 -60 -50 -40 -30 -20 -10 0 °C 190 Transient thermal impedance thJC parameter : K 14.0µ 100 µ -10 - Page 5 SPP80P06P G SPB80P06P ³ SPP80P06P 100 120 140 160 ) SPP80P06P D = 0.50 single pulse - 2009-11-19 °C 190 T C 0.20 0.10 0.05 0.02 0. ...
Page 6
... - Typ. forward transconductance parameter - Page 6 SPP80P06P G SPB80P06P SPP80P06P [ -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 0 -20 -40 -60 -80 -100 -120 ); T =25° -10 -20 -30 -40 -50 -60 -70 -80 2009-11- -10 ...
Page 7
... T j Forward characteristics of reverse diode parameter iss C oss 10 C rss 10 - Page 7 SPP80P06P G SPB80P06P -5 98% typ 2% -60 -60 -60 -60 -20 -20 -20 - 100 100 100 100 ) µs p SPP80P06P 3 ...
Page 8
... Rev 1.4 Typ. gate charge parameter -16 V -12 -10 125 145 °C 185 T j °C 100 140 200 T j Page 8 SPP80P06P G SPB80P06P Gate = -80 A pulsed D SPP80P06P V 0,2 DS max - 100 120 140 V 0,8 DS max 180 nC Q Gate 2009-11-19 ...
Page 9
... PG-TO220-3 Rev 1.4 Page 9 SPP80P06P G SPB80P06P G 2009-11-19 ...
Page 10
... PG-TO263-3 Rev 1.4 Page 10 SPP80P06P G SPB80P06P G 2009-11-19 ...
Page 11
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 1.4 ). (www.infineon.com Page 11 SPP80P06P G SPB80P06P G 2009-11-19 ...