SPP80N03 Siemens Semiconductor, SPP80N03 Datasheet
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SPP80N03
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SPP80N03 Summary of contents
Page 1
... Continuous drain current Ordering Code Packaging Tube Q67040-S4734-A3 Tabe and Reel Symbol Dpulse jmax tot SPP80N03 0.006 R DS(on Pin 1 Pin 2 Pin Value 80 80 320 700 300 -55... +175 stg 55/175/56 V ...
Page 2
... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group Symbol R thJC R thJA R thJA Symbol V (BR)DSS = 25 ° GS(th) I DSS I GSS R DS(on) 2 SPP80N03 Values Unit min. typ. max 0.5 K Values Unit min. typ. max ...
Page 3
... R = 2.5 G Fall time 2.5 G Semiconductor Group Symbol iss C oss C rss t d(on d(off SPP80N03 Values Unit min. typ. max 3970 5000 pF - 1920 2500 - 775 1000 - ...
Page 4
... Reverse recovery charge 100 A/µ Semiconductor Group Symbol (plateau SPP80N03 Values Unit min. typ. max 76.5 - 112 175 - 4 320 - 1.1 1 ...
Page 5
... SPP80N03 54.0µ 100 µ SPP80N03 ) 100 120 140 160 °C 190 ) 0.50 single pulse - 0.20 0.10 0.05 0.02 0.01 0 ...
Page 6
... V 0.002 V 5.0 0.000 Typ. forward transconductance = parameter SPP80N03 ) [ 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8 100 120 A = 25° ...
Page 7
... Coss Crss 0 SPP80N03 = 240 µ 140 °C -60 - 100 ) µ SPP80N03 °C typ 175 °C typ °C (98 175 °C (98%) j 0.4 0.8 1.2 1.6 2.0 max typ min 200 2.4 3 ...
Page 8
... Semiconductor Group Typ. gate charge ) parameter 120 140 °C 180 T j 140 °C 100 200 SPP80N03 ) Gate = puls SPP80N03 V V 0,2 0,8 DS max 100 120 140 DS max 170 nC Q Gate ...
Page 9
... If they fail reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group 9 SPP80N03 ...