IPB042N10N3 G Infineon Technologies, IPB042N10N3 G Datasheet - Page 6

• Manufacturer Part Number: IPB042N10N3 G
• Description: MOSFET N-CH 100V 100A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB042N10N3 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 3.5V @ 150µA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 8410pF @ 50V
• Power - Max: 214W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0042 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 214 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000446880

9 Drain-source on-state resistance
R
11 Typ. capacitances
C
V
10
10
10
10
10
8
6
4
2
0
4
3
2
1
-60
0
T
V
I
-20
20
f
20
V
V
T
j
DS
60
40
[°C]
[V]
100
60
140
180
80
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
V
3.5
2.5
1.5
0.5
10
10
10
10
4
3
2
1
0
3
2
1
0
-60
0
T
I
T
V
-20
IPB042N10N3 G
V
0.5
20
V
T
SD
j
60
[°C]
1
[V]
IPP045N10N3 G
100
IPI045N10N3 G
1.5
140
180
2