IPB042N10N3 G Infineon Technologies, IPB042N10N3 G Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
IPB042N10N3 G
Manufacturer Part Number
IPB042N10N3 G
Description
MOSFET N-CH 100V 100A TO263-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB042N10N3_G.pdf
(11 pages)
Specifications of IPB042N10N3 G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.2 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
3.5V @ 150µA
Gate Charge (qg) @ Vgs
117nC @ 10V
Input Capacitance (ciss) @ Vds
8410pF @ 50V
Power - Max
214W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0042 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
214 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000446880
9 Drain-source on-state resistance
R
11 Typ. capacitances
C
V
10
10
10
10
10
8
6
4
2
0
4
3
2
1
-60
0
T
V
I
-20
20
f
20
V
V
T
j
DS
60
40
[°C]
[V]
100
60
140
180
80
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
V
3.5
2.5
1.5
0.5
10
10
10
10
4
3
2
1
0
3
2
1
0
-60
0
T
I
T
V
-20
IPB042N10N3 G
V
0.5
20
V
T
SD
j
60
[°C]
1
[V]
IPP045N10N3 G
100
IPI045N10N3 G
1.5
140
180
2