IPB042N10N3 G Infineon Technologies, IPB042N10N3 G Datasheet - Page 4

• Manufacturer Part Number: IPB042N10N3 G
• Description: MOSFET N-CH 100V 100A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB042N10N3 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 3.5V @ 150µA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 8410pF @ 50V
• Power - Max: 214W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0042 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 214 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000446880

1 Power dissipation
P
3 Safe operating area
I
V
250
200
150
100
10
10
10
10
10
50
T
0
-1
3
2
1
0
10
0
-1
T
t
10
50
0
D
V
T
C
DS
100
10
[°C]
1
[V]
150
10
2
200
10
3
2 Drain current
I
4 Max. transient thermal impedance
Z
T
120
100
10
10
10
80
60
40
20
0
-1
-2
t
0
0
V
D t T
IPB042N10N3 G
50
T
t
C
100
p
[°C]
[s]
IPP045N10N3 G
IPI045N10N3 G
150
200