SPB80P06P G Infineon Technologies, SPB80P06P G Datasheet - Page 8

• Manufacturer Part Number: SPB80P06P G
• Description: MOSFET P-CH 60V 80A TO-263
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPB80P06P G

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 64A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 5.5mA
• Gate Charge (qg) @ Vgs: 173nC @ 10V
• Input Capacitance (ciss) @ Vds: 5033pF @ 25V
• Power - Max: 340W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.023 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 340000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package: D2PAK (TO-263)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 23.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000096088; SPB80P06P G; SPB80P06PGINTR; SPB80P06PGXT

Avalanche energy
E
para.: I
Drain-source breakdown voltage
V
AS
(BR)DSS
mJ
Rev 1.4
850
700
600
500
400
300
200
100
V
-72
-68
-66
-64
-62
-60
-58
-56
-54
= f ( T
0
-60
25
D
SPP80P06P
= -80 A , V
j
= f ( T
)
45
-20
65
j
)
20
85
DD
60
105
= -25 V, R
100
125
145
140
GS
°C
°C
T
T
= 25
j
j
185
200
W
Page 8
Typ. gate charge
V
parameter: I
GS
V
-16
-12
-10
= f ( Q
-8
-6
-4
-2
0
0
SPP80P06P
20
Gate
D
40
= -80 A pulsed
)
0,2
60
V
DS max
80
100 120 140
SPB80P06P G
SPP80P06P G
0,8
2009-11-19
V
DS max
nC
Q
Gate
180