SPB80P06P G Infineon Technologies, SPB80P06P G Datasheet

SPB80P06P G

Manufacturer Part Number

SPB80P06P G

Description

MOSFET P-CH 60V 80A TO-263

Manufacturer

Infineon Technologies

Series

SIPMOS®r

Datasheet

1.SPB80P06P_G.pdf (11 pages)

Specifications of SPB80P06P G

Package / Case

D²Pak, TO-263 (2 leads + tab)

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

23 mOhm @ 64A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

80A

Vgs(th) (max) @ Id

4V @ 5.5mA

Gate Charge (qg) @ Vgs

173nC @ 10V

Input Capacitance (ciss) @ Vds

5033pF @ 25V

Power - Max

340W

Mounting Type

Surface Mount

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.023 Ohm @ 10 V

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

80 A

Power Dissipation

340000 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package

D2PAK (TO-263)

Vds (max)

-60.0 V

Rds (on) (max) (@10v)

23.0 mOhm

Rds (on) (max) (@4.5v)

Rds (on) (max) (@2.5v)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

SP000096088
SPB80P06P G
SPB80P06PGINTR
SPB80P06PGXT

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• P-Channel

• Enhancement mode

• Avalanche rated

• dv/dt rated

• 175°C operating temperature

• Pb-free lead plating; RoHs compliant

• Qualified according to AEC Q101

Maximum Ratings,at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, periodic limited by T

Reverse diode d v /d t

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

1 Current limited by bondwire; with an R

Type

SPP80P06P G

SPB80P06P G

C =

jmax

= -80 A, V

= -80 A , V

= 100 °C

= 25 °C

SIPMOS

Features

Rev 1.4

25 °C,

Enhancement mode

175°C operating temperature

P-Channel

Avalanche rated

d v /d t rated

= 175 °C

= -48 , d i /d t = 200 A/µs,

Power-Transistor

= -25 V, R

PG-TO263-3

PG-TO220-3

Package

= 25 °C, unless otherwise specified

= 25

thJC

Lead free

Yes

= 0.4 K/W the chip is able to carry I

Product Summary

Drain source voltage

Drain-source on-state resistance

Continuous drain current

jmax

Page 1

Symbol

d v /d t

D puls

j ,

tot

stg

-55...+175

55/175/56

= -91A

Value

Pin 1

-320

823

±20

340

-80

-64

DS(on)

PIN 2/4

SPB80P06P G

SPP80P06P G

2009-11-19

0.023

-60

-80

Unit

kV/µs

°C

PIN 3

Related parts for SPB80P06P G

SPB80P06P G Summary of contents

Page 1

... Continuous drain current Lead free Yes Yes = 25 °C, unless otherwise specified Symbol puls jmax tot 0.4 K/W the chip is able to carry I thJC Page 1 SPP80P06P G SPB80P06P DS(on Pin 1 PIN 2 Value -80 -64 -320 823 34 6 ±20 340 T -55...+175 stg 55/175/56 = -91A D - 0.023 ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 1.4 Symbol °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS = 25 ° 150 ° GSS R DS(on) Page 2 SPP80P06P G SPB80P06P G Values min. typ. max thJC - - thJA thJA - - - - Values min. typ. max. - -0.1 - -10 ...

Page 3

... Reverse transfer capacitance - MHz GS DS Turn-on delay time Rise time Turn-off delay time Fall time Rev 1 °C, unless otherwise specified j Symbol - d(on d(off Page 3 SPP80P06P G SPB80P06P G Values min. typ. max 4026 5033 iss - 1252 1565 oss - 437 rss - Unit - S pF 546 2009-11-19 ...

Page 4

... GS F Reverse recovery time 100 A/µ Reverse recovery charge 100 A/µ Rev 1 °C, unless otherwise specified j Symbol - (plateau) Symbol Page 4 SPP80P06P G SPB80P06P G Values min. typ. max 115 173 g - -6.2 Values min. typ. max -320 - -1.2 -1.6 - 117 - 420 rr Unit Unit - 175 ...

Page 5

... Rev 1.4 Drain current parameter: V -90 A -70 -60 -50 -40 -30 -20 -10 0 °C 190 Transient thermal impedance thJC parameter : K 14.0µ 100 µ -10 - Page 5 SPP80P06P G SPB80P06P ³ SPP80P06P 100 120 140 160 ) SPP80P06P D = 0.50 single pulse - 2009-11-19 °C 190 T C 0.20 0.10 0.05 0.02 0. ...

Page 6

... - Typ. forward transconductance parameter - Page 6 SPP80P06P G SPB80P06P SPP80P06P [ -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 0 -20 -40 -60 -80 -100 -120 ); T =25° -10 -20 -30 -40 -50 -60 -70 -80 2009-11- -10.0 ...

Page 7

... T j Forward characteristics of reverse diode parameter iss C oss 10 C rss 10 - Page 7 SPP80P06P G SPB80P06P -5 98% typ 2% -60 -60 -60 -60 -20 -20 -20 - 100 100 100 100 ) µs p SPP80P06P ° ...

Page 8

... Rev 1.4 Typ. gate charge parameter -16 V -12 -10 125 145 °C 185 T j °C 100 140 200 T j Page 8 SPP80P06P G SPB80P06P Gate = -80 A pulsed D SPP80P06P V 0,2 DS max - 100 120 140 V 0,8 DS max 180 nC Q Gate 2009-11-19 ...

Page 9

... PG-TO220-3 Rev 1.4 Page 9 SPP80P06P G SPB80P06P G 2009-11-19 ...

Page 10

... PG-TO263-3 Rev 1.4 Page 10 SPP80P06P G SPB80P06P G 2009-11-19 ...

Page 11

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 1.4 ). (www.infineon.com Page 11 SPP80P06P G SPB80P06P G 2009-11-19 ...

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