IPP100N08S2-07 Infineon Technologies, IPP100N08S2-07 Datasheet - Page 6
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IPP100N08S2-07
Manufacturer Part Number
IPP100N08S2-07
Description
MOSFET N-CH 75V 100A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB100N08S2-07.pdf
(8 pages)
Specifications of IPP100N08S2-07
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.1 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
4700pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0071 Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000219005
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPP100N08S2-07
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.0
9 Typ. Drain-source on-state resistance
R
parameter: I
11 Typ. capacitances
C = f(V
DS(ON)
10
10
10
12
10
8
6
4
2
DS
4
3
2
= f(T
-60
0
); V
D
j
)
GS
= 80 A; V
-20
= 0 V; f = 1 MHz
5
20
10
GS
= 10 V
V
T
DS
j
60
15
[°C]
[V]
100
20
140
25
Crss
Coss
Ciss
180
30
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
3.5
2.5
1.5
10
10
10
10
= f(T
4
3
2
1
3
2
1
0
SD
-60
0
)
j
); V
D
j
IPP100N08S2-07, IPI100N08S2-07
0.2
-20
GS
= V
0.4
20
DS
175 °C
250µA
0.6
V
T
SD
j
60
[°C]
25 °C
[V]
0.8
1250µA
IPB100N08S2-07
100
1
140
2006-03-03
1.2
180
1.4