IPP100N08S2-07 Infineon Technologies, IPP100N08S2-07 Datasheet - Page 4
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IPP100N08S2-07
Manufacturer Part Number
IPP100N08S2-07
Description
MOSFET N-CH 75V 100A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB100N08S2-07.pdf
(8 pages)
Specifications of IPP100N08S2-07
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.1 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
4700pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0071 Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000219005
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPP100N08S2-07
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
= f(V
1000
= f(T
100
350
300
250
200
150
100
10
50
1
0
0.1
DS
0
C
); T
); V
p
C
GS
= 25 °C; D = 0
≥ 6 V
50
1
V
T
C
DS
100
[°C]
[V]
1 ms
10
100 µs
150
10 µs
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
= f(T
120
100
10
10
10
= f(t
10
80
60
40
20
0
-1
-2
-3
0
C
10
); V
0
p
-7
0.01
0.05
)
0.1
0.5
GS
10
IPP100N08S2-07, IPI100N08S2-07
≥ 10 V
p
-6
/T
single pulse
50
10
-5
10
T
t
-4
C
100
p
[°C]
[s]
10
-3
IPB100N08S2-07
10
150
-2
10
2006-03-03
-1
200
10
0