SPI11N65C3 Infineon Technologies, SPI11N65C3 Datasheet - Page 8

• Manufacturer Part Number: SPI11N65C3
• Description: MOSFET N-CH 650V 11A TO-262
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPI11N65C3

• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3.9V @ 500µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 33000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 5 ns
• Rise Time: 5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014526; SPI11N65C3; SPI11N65C3IN; SPI11N65C3X; SPI11N65C3XK

13 Typ. switching time
t = f (I
par.: V
15 Typ. drain current slope
di/dt = f(R
par.: V
Rev. 2.91
A/µs
3000
2000
1500
1000
ns
500
70
60
55
50
45
40
35
30
25
20
15
10
D
5
0
0
DS
DS
), inductive load, T
0
0
=380V, V
=380V, V
G
), inductive load, T
20
tr
2
tf
40
GS
4
GS
di/dt(on)
=0/+13V, R
=0/+13V, I
60
td(on)
6
j
td(off)
=125°C
di/dt(off)
j
80
8
= 125°C
D
G
=11A
=6.8Ω
A
Ω
I
R
D
G
120
12
Page 8
14 Typ. switching time
t = f (R
par.: V
16 Typ. drain source voltage slope
dv/dt = f(R
par.: V
V/ns
ns
350
250
200
150
100
140
120
110
100
50
90
80
70
60
50
40
30
20
10
0
G
DS
DS
0
0
), inductive load, T
=380V, V
=380V, V
SPP11N65C3,SPA11N65C3
G
10
10
), inductive load, T
dv/dt(off)
20
20
GS
GS
=0/+13V, I
=0/+13V, I
30
30
dv/dt(on)
j
=125°C
40
40
SPI11N65C3
j
= 125°C
50
50
D
D
2009-11-30
=11 A
=11A
Ω
Ω
td(off)
td(on)
tr
tf
R
R
G
G
70
70