SPI11N65C3 Infineon Technologies, SPI11N65C3 Datasheet - Page 4

MOSFET N-CH 650V 11A TO-262

SPI11N65C3

Manufacturer Part Number
SPI11N65C3
Description
MOSFET N-CH 650V 11A TO-262
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of SPI11N65C3

Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3.9V @ 500µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohm @ 10 V
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
33000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
5 ns
Rise Time
5 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000014526
SPI11N65C3
SPI11N65C3IN
SPI11N65C3X
SPI11N65C3XK

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPI11N65C3
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
SPI11N65C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
SPI11N65C3
Quantity:
320
Company:
Part Number:
SPI11N65C3
Quantity:
10
Rev. 2.91
Electrical Characteristics
Parameter
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
Typical Transient Thermal Characteristics
Symbol
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
SPP_I
0.015
0.056
0.197
0.216
0.083
0.03
P
tot
(t)
Value
T
j
C
0.056
0.194
0.413
2.522
SPA
0.15
0.03
th1
R
th1
Symbol
I
I
V
t
Q
I
di
S
SM
rr
rrm
SD
rr
rr
C
/dt
th2
Unit
K/W
Page 4
T
V
V
di
T
C
j
GS
R
F
=25°C
C
=25°C
/dt=100A/µs
=480V, I
Symbol
C
C
C
C
C
C
R
Conditions
th,n
=0V, I
th,n
th1
th2
th3
th4
th5
th6
F
F
=I
T
T
=I
case
amb
S
S
SPP11N65C3,SPA11N65C3
,
0.0001878
0.0007106
0.000988
0.002791
0.007285
SPP_I
0.063
External Heatsink
min.
-
-
-
-
-
-
-
Value
Values
0.0001878
0.0007106
1200
0.000988
0.002791
0.007401
typ.
400
41
1
6
-
-
0.412
SPA
SPI11N65C3
2009-11-30
max.
600
1.2
11
33
-
-
-
Unit
Ws/K
Unit
A
V
ns
µC
A
A/µs

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