SPP07N60CFD Infineon Technologies, SPP07N60CFD Datasheet - Page 9
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SPP07N60CFD
Manufacturer Part Number
SPP07N60CFD
Description
MOSFET N-CH 650V 6.6A TO-220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.SPP07N60CFD.pdf
(12 pages)
Specifications of SPP07N60CFD
Package / Case
TO-220-3 (Straight Leads)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
700 mOhm @ 4.6A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
6.6A
Vgs(th) (max) @ Id
5V @ 300µA
Gate Charge (qg) @ Vgs
47nC @ 10V
Input Capacitance (ciss) @ Vds
790pF @ 25V
Power - Max
83W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.7 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.6 A
Power Dissipation
83000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
6.6A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
700mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000264424
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPP07N60CFD
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
SPP07N60CFD
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.4
17 Typ. reverse recovery charge
Q
rr
=f(I
0.8
0.7
0.6
0.5
0.4
0.3
0.2
S
); parameter: di/ dt =100 A/µs
2
3
25 °C
I
S
4
[A]
125 °C
5
page 9
6
18 Typ. reverse recovery charge
Q
rr
=f(di /dt ); parameter: I
1.1
0.9
0.8
0.7
0.6
0.5
1
100
125 °C
25 °C
300
d i/d t [A/µs]
D
=6.6 A
500
SPP07N60CFD
700
2009-11-27
900