SPP07N60CFD Infineon Technologies, SPP07N60CFD Datasheet

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SPP07N60CFD

Manufacturer Part Number
SPP07N60CFD
Description
MOSFET N-CH 650V 6.6A TO-220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of SPP07N60CFD

Package / Case
TO-220-3 (Straight Leads)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
700 mOhm @ 4.6A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
6.6A
Vgs(th) (max) @ Id
5V @ 300µA
Gate Charge (qg) @ Vgs
47nC @ 10V
Input Capacitance (ciss) @ Vds
790pF @ 25V
Power - Max
83W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.7 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.6 A
Power Dissipation
83000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
6.6A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
700mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000264424

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPP07N60CFD
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
SPP07N60CFD
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.4
CoolMOS
Features
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Qualified for industrial grade applications according to JEDEC
CoolMOS CFD designed for:
• Soft switching PWM Stages
• LCD & CRT TV
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
Drain source voltage slope
Reverse diode dv /dt
Maximum diode commutation speed
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
Type
SPP07N60CFD
TM
Power Transistor
2)
j
Package
PG-TO220
=25 °C, unless otherwise specified
2),3)
2),3)
Symbol Conditions
I
I
E
E
I
dv /dt
dv /dt
di /dt
V
P
T
D
D,pulse
AR
j
AS
AR
GS
tot
, T
Marking
07N60CFD
stg
T
T
T
I
I
I
T
I
T
static
AC (f >1 Hz)
T
M3 & M3.5 screws
D
D
D
S
page 1
C
C
C
j
j
C
=3.3 A, V
=6.6 A, V
=6.6 A, V
=125°C
=6.6 A, V
=125 °C
=25 °C
=100 °C
=25 °C
=25 °C
DS
DD
DD
DS
Product Summary
V
R
I
=480 V,
=50 V
=50 V
=480 V,
D
1)
DS
DS(on),max
@T
jmax
-55 ... 150
Value
230
600
±20
±30
PG-TO220
6.6
4.3
0.5
6.6
17
80
40
83
60
SPP07N60CFD
650
0.7
6.6
Unit
A
mJ
A
V/ns
V/ns
A/µs
V
W
°C
Ncm
V
A
2009-11-27

Related parts for SPP07N60CFD

SPP07N60CFD Summary of contents

Page 1

... DS dv /dt T =125° / =125 ° /dt V static >1 Hz =25 °C tot stg M3 & M3.5 screws page 1 SPP07N60CFD Product Summary jmax R DS(on),max I D PG-TO220 1) Value 6.6 4.3 17 =50 V 230 =50 V 0.5 6.6 =480 =480 V, 600 ±20 ±30 83 -55 ... 150 ...

Page 2

... GS(th =600 DSS T =25 ° =600 =150 ° = GSS = =4 DS(on) T =25 ° = =4 =150 ° MHz, open drain G |V |>2 DS(on)max =4 page 2 SPP07N60CFD Values Unit min. typ. max 1.5 K 260 °C 600 - - V - 700 - 0.6 - µA - 630 - - - 100 nA - 0.59 0 2009-11-27 ...

Page 3

... MHz C rss C o(er 480 V C o(tr) t d(on) V =400 = =6 =6.8 d(off =480 V, I =6.6A plateau = while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V oss DS page 3 SPP07N60CFD Values Unit min. typ. max. - 790 - pF - 260 - - 6 7 *f. DSS. DSS. 2009-11-27 ...

Page 4

... Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Rev. 1.4 Symbol Conditions =25 ° S,pulse =25 ° =480 /dt =100 A/µ rrm =25 ° page 4 SPP07N60CFD Values Unit min. typ. max 6 1.0 1 104 200 ns - 0.5 1.42 µ 1000 - A/µs 2009-11-27 ...

Page 5

... Max. transient thermal impedance I =f =25 ° parameter: D 0.5 0.2 0.1 0.05 0. 0.01 single pulse - Rev. 1.4 2 Safe operating area I =f(V D parameter 120 160 T [° Typ. output characteristics I =f(V D parameter [s] p page 5 SPP07N60CFD ); T =25 ° limited by on-state resistance 1 10 100 µ [ =25 ° µs 10 µ ...

Page 6

... Rev. 1.4 6 Typ. drain-source on-state resistance R DS(on) parameter Typ. transfer characteristics = =f parameter: T typ 60 100 140 180 T [°C] j page 6 SPP07N60CFD =f =150 ° 2 |>2 DS(on)max ° 150 ° [V] GS ...

Page 7

... AR AR parameter: T j(start Rev. 1.4 10 Forward characteristics of reverse diode I =f(V F parameter: T 120 V 480 [nC] gate 12 Avalanche energy E =f °C 125 ° [µs] AR page 7 SPP07N60CFD ) ° 150 °C 25 ° 250 200 150 100 100 125 T [°C] j 150 °C, 98% 1.5 2 150 175 2009-11-27 ...

Page 8

... Rev. 1.4 14 Typ. capacitances C =f(V 60 100 140 180 T [° Typ. reverse recovery charge Q =f(T rr 0.7 0.65 0.6 0.55 0.5 300 400 500 600 V [V] DS page 8 SPP07N60CFD ); MHz Ciss Coss 1 10 Crss 100 200 300 V [V] DS );parameter [°C] j 400 ...

Page 9

... A/µ 0.8 0.7 0.6 0.5 0.4 25 °C 0.3 0 Rev. 1.4 18 Typ. reverse recovery charge Q =f(di /dt ); parameter 1.1 125 °C 0.9 0.8 0.7 0.6 0 [A] S page 9 SPP07N60CFD =6 125 °C 25 °C 100 300 500 700 d i/d t [A/µs] 900 2009-11-27 ...

Page 10

... Definition of diode switching characteristics Rev. 1.4 page 10 SPP07N60CFD 2009-11-27 ...

Page 11

... PG-TO-220-3-1; -3-21 Dimensions in mm/ inches Rev. 1.4 page 11 SPP07N60CFD 2009-11-27 ...

Page 12

... Rev. 1.4 page 12 SPP07N60CFD 2009-11-27 ...

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