IPP12CN10L G Infineon Technologies, IPP12CN10L G Datasheet - Page 9

• Manufacturer Part Number: IPP12CN10L G
• Description: MOSFET N-CH 100V 69A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP12CN10L G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 69A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 69A
• Vgs(th) (max) @ Id: 2.4V @ 83µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 5600pF @ 50V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 9.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.012 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 69 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000308792

IPS12CN10L G
IPP12CN10L G
Rev. 1.02
page 9
2008-07-15