IPP12CN10L G Infineon Technologies, IPP12CN10L G Datasheet - Page 5

• Manufacturer Part Number: IPP12CN10L G
• Description: MOSFET N-CH 100V 69A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP12CN10L G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 69A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 69A
• Vgs(th) (max) @ Id: 2.4V @ 83µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 5600pF @ 50V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 9.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.012 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 69 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000308792

Rev. 1.02
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
250
200
150
100
150
100
50
50
DS
GS
0
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
|>2|I
1
D
|R
2
DS(on)max
4.5 V
6 V
5.5 V
5 V
2
175 °C
10 V
V
V
GS
DS
6.5 V
[V]
[V]
8 V
25 °C
3
7 V
4
4
page 5
5
6
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
160
140
120
100
30
25
20
15
10
80
60
40
20
D
=f(I
5
0
0
); T
0
0
4.5 V
D
j
); T
=25 °C
GS
20
j
=25 °C
20
5 V
40
40
60
I
I
D
D
[A]
[A]
5.5 V
80
60
IPS12CN10L G
IPP12CN10L G
100
80
10 V
6 V
120
2008-07-15
100
140