BSS87E6327 Infineon Technologies, BSS87E6327 Datasheet - Page 7

• Manufacturer Part Number: BSS87E6327
• Description: MOSFET N-CH 240V 260MA SOT-89
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS87E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 260mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 260mA
• Vgs(th) (max) @ Id: 1.8V @ 108µA
• Gate Charge (qg) @ Vgs: 5.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 97pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSS87; BSS87INTR

13 Typ. gate charge
V
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
BSS87
0.2 V
0.5 V
0.8 V
I
D
G
DS max
DS max
DS max
= 0.26 A pulsed, T
1
); parameter: V
2
3
DS
4
j
= 25 °C
,
nC
Q
Rev. 1.41
G
6
Page 7
14 Drain-source breakdown voltage
V
(BR)DSS
291
276
271
266
261
256
251
246
241
236
231
226
221
216
V
-60
BSS87
= f (T
-20
j
)
20
60
100
2010-01-27
°C
BSS87
T
j
180