BSS87E6327 Infineon Technologies, BSS87E6327 Datasheet - Page 5

• Manufacturer Part Number: BSS87E6327
• Description: MOSFET N-CH 240V 260MA SOT-89
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS87E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 260mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 260mA
• Vgs(th) (max) @ Id: 1.8V @ 108µA
• Gate Charge (qg) @ Vgs: 5.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 97pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSS87; BSS87INTR

5 Typ. output characteristic
I
parameter: T
7 Typ. transfer characteristics
I
parameter: T
D
D
= f ( V
= f (V
0.52
0.44
0.36
0.32
0.28
0.24
0.16
0.12
0.08
0.04
0.4
0.2
A
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
A
0
1
0
0
0
DS
10V
7V
6V
5V
4.5V
4.1V
3.5V
2.9V
2.3V
GS
0.5
)
); V
0.8
j
j
= 25 °C, V
= 25 °C
DS
1
³ 2 x I
1.6
1.5
D
2
GS
2.4
x R
2.5
DS(on)max
3.2
3
V
V
V
V
Rev. 1.41
DS
GS
4.4
4
Page 5
6 Typ. drain-source on resistance
R
parameter: T
8 Typ. forward transconductance
g
parameter: T
fs
DS(on)
= f(I
W
0.6
0.4
0.3
0.2
0.1
S
10
8
7
6
5
4
3
2
1
0
0
0
0
D
= f (I
)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0.08
D
j
j
= 25 °C, V
= 25 °C
)
0.16
2.3V
0.24
GS
0.32
2010-01-27
2.9V
0.4
BSS87
A
I
I
3.5V
4.1V
4.5V
5V
6V
7V
10V
A
D
D
0.52
1