NTMFS4833NT1G ON Semiconductor, NTMFS4833NT1G Datasheet - Page 6

• Manufacturer Part Number: NTMFS4833NT1G
• Description: MOSFET N-CH 30V 16A SO-8FL
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTMFS4833NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5600pF @ 12V
• Power - Max: 910mW
• Mounting Type: Surface Mount
• Package / Case: 5-DFN, SO8 FL
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.3 m Ohms
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 191 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.002Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO-FL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMFS4833NT1G; NTMFS4833NT1GOSTR

NTMFS4833N
TYPICAL PERFORMANCE CURVES
1000
100
25°C
100°C
10
125°C
1
1
10
100
1,000
10,000
PULSE WIDTH (ms)
Figure 13. Avalanche Characteristics
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