NTMFS4833NT1G ON Semiconductor, NTMFS4833NT1G Datasheet - Page 3

MOSFET N-CH 30V 16A SO-8FL

NTMFS4833NT1G

Manufacturer Part Number
NTMFS4833NT1G
Description
MOSFET N-CH 30V 16A SO-8FL
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheets

Specifications of NTMFS4833NT1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
58nC @ 4.5V
Input Capacitance (ciss) @ Vds
5600pF @ 12V
Power - Max
910mW
Mounting Type
Surface Mount
Package / Case
5-DFN, SO8 FL
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.3 m Ohms
Forward Transconductance Gfs (max / Min)
30 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
191 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.002Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SO-FL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTMFS4833NT1G
NTMFS4833NT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTMFS4833NT1G
Manufacturer:
ON
Quantity:
721
Part Number:
NTMFS4833NT1G
Manufacturer:
ON/安森美
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
DRAIN-SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
Parameter
(T
J
= 25°C unless otherwise specified)
Symbol
V
Q
t
R
L
L
L
RR
t
t
SD
a
b
RR
S
D
G
G
http://onsemi.com
NTMFS4833N
V
GS
V
3
I
S
GS
= 0 V, dIS/dt = 100 A/ms,
= 30 A
= 0 V,
Test Condition
T
I
S
A
= 30 A
= 25°C
T
T
J
J
= 125°C
= 25°C
Min
-
-
-
-
-
-
-
-
-
-
0.005
0.68
0.50
1.84
Typ
0.8
1.0
38
19
19
36
Max
1.0
-
-
-
-
-
-
-
-
-
Unit
nH
nH
nH
ns
nC
W
V

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