NTMFS4833NT1G ON Semiconductor, NTMFS4833NT1G Datasheet - Page 5

• Manufacturer Part Number: NTMFS4833NT1G
• Description: MOSFET N-CH 30V 16A SO-8FL
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTMFS4833NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5600pF @ 12V
• Power - Max: 910mW
• Mounting Type: Surface Mount
• Package / Case: 5-DFN, SO8 FL
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.3 m Ohms
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 191 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.002Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO-FL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMFS4833NT1G; NTMFS4833NT1GOSTR

1000
1000
0.01
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
100
100
8000
7000
6000
5000
4000
3000
2000
1000
0.1
10
10
1
0
-10
1
0.1
V
I
V
D
V
SINGLE PULSE
T
Figure 11. Maximum Rated Forward Biased
C
DD
GS
C
C
GS
= 15 A
V
rss
iss
= 25°C
DS
= 15 V
= 11.5 V
V
= 20 V
Figure 9. Resistive Switching Time
-5
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
= 0 V
V
GS
R
THERMAL LIMIT
PACKAGE LIMIT
R
DS(on)
G
Safe Operating Area
, GATE RESISTANCE (W)
0
1
V
GS
V
LIMIT
DS
= 0 V
5
10
10
10
TYPICAL PERFORMANCE CURVES
15
T
J
10 ms
100 ms
1 ms
10 ms
dc
= 25°C
20
http://onsemi.com
t
t
t
t
d(off)
r
f
d(on)
NTMFS4833N
C
C
iss
oss
100
100
25
5
650
600
550
500
450
400
350
300
250
200
150
100
12
10
30
25
20
15
10
50
8
6
4
2
0
5
0
0
Figure 8. Gate-To-Source and Drain-To-Source
0
0
25
Figure 10. Diode Forward Voltage vs. Current
Figure 12. Maximum Avalanche Energy vs.
Q1
V
T
10
T
V
J
GS
J
SD
= 25°C
, STARTING JUNCTION TEMPERATURE (°C)
= 0 V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Starting Junction Temperature
0.2
50
20
Q
G
Voltage vs. Total Charge
Q2
, TOTAL GATE CHARGE (nC)
30
0.4
75
40
Q
T
50
0.6
100
60
I
T
D
70
J
125
= 30 A
0.8
I
= 25°C
D
= 35 A
80
V
GS
150
1.0
90