IPS118N10N G Infineon Technologies, IPS118N10N G Datasheet - Page 4
![MOSFET N-CH 100V 75A TO251-3](/photos/5/60/56062/dpak_369d___01_sml.jpg)
IPS118N10N G
Manufacturer Part Number
IPS118N10N G
Description
MOSFET N-CH 100V 75A TO251-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPS118N10N_G.pdf
(9 pages)
Specifications of IPS118N10N G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11.8 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 83µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
4320pF @ 50V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak (3 straight short leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0118 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant