IPS118N10N G Infineon Technologies, IPS118N10N G Datasheet

IPS118N10N G

Manufacturer Part Number

IPS118N10N G

Description

MOSFET N-CH 100V 75A TO251-3

Manufacturer

Infineon Technologies

Series

OptiMOS™r

Datasheet

1.IPS118N10N_G.pdf (9 pages)

Specifications of IPS118N10N G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

11.8 mOhm @ 75A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

75A

Vgs(th) (max) @ Id

4V @ 83µA

Gate Charge (qg) @ Vgs

65nC @ 10V

Input Capacitance (ciss) @ Vds

4320pF @ 50V

Power - Max

125W

Mounting Type

Through Hole

Package / Case

IPak, TO-251, DPak (3 straight short leads + tab)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0118 Ohms

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

75 A

Power Dissipation

125 W

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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