IPP084N06L3 G Infineon Technologies, IPP084N06L3 G Datasheet - Page 7

• Manufacturer Part Number: IPP084N06L3 G
• Description: MOSFET N-CH 60V 50A TO-220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP084N06L3 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.2V @ 34µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4900pF @ 30V
• Power - Max: 79W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 7mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0084 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 79 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000398080

13 Avalanche characteristics
I
15 Drain-source breakdown voltage
V
100
10
1
70
65
60
55
50
t
0.1
-60
R
T
T
-20
I
1
20
t
AV
T
10
j
[µs]
60
[°C]
100
100
140
1000
180
14 Typ. gate charge
V
16 Gate charge waveforms
Q
10
V
8
6
4
2
0
V
Q
0
V
I
Q
IPB081N06L3 G IPP084N06L3 G
10
20
Q
Q
gate
g
Q
[nC]
Q
30
40
Q
g ate
50