IPP084N06L3 G Infineon Technologies, IPP084N06L3 G Datasheet

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IPP084N06L3 G

Manufacturer Part Number
IPP084N06L3 G
Description
MOSFET N-CH 60V 50A TO-220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPP084N06L3_G.pdf (10 pages)

Specifications of IPP084N06L3 G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.4 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2.2V @ 34µA
Gate Charge (qg) @ Vgs
29nC @ 4.5V
Input Capacitance (ciss) @ Vds
4900pF @ 30V
Power - Max
79W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
7mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor
RoHS Compliant
Transistor Case Style
TO-220
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.0084 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
79 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000398080
Features
Maximum ratings,
Parameter
Type
Package
Marking
™
3 Power-Transistor
T
R
R
Symbol Conditions
I
I
E
V
P
T T
T
T
T
I
T
R
Product Summary
V
R
I
IPB081N06L3 G IPP084N06L3 G
Value
Unit

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IPP084N06L3 G Summary of contents

Page 1

... Power-Transistor Features R Type Package Marking Maximum ratings, T Parameter Product Summary Symbol Conditions IPB081N06L3 G IPP084N06L3 G Value Unit ...

Page 2

... Parameter Thermal characteristics Electrical characteristics, T Static characteristics IPB081N06L3 G IPP084N06L3 G Symbol Conditions Values Unit min. typ. max. ...

Page 3

... Parameter Dynamic characteristics Reverse Diode IPB081N06L3 G IPP084N06L3 G Symbol Conditions Values Unit min. typ. max. ...

Page 4

... Power dissipation P T 100 100 T [° Safe operating area [ Drain current 150 200 0 4 Max. transient thermal impedance IPB081N06L3 G IPP084N06L3 G 50 100 150 T [° [s] p 200 0 10 ...

Page 5

... Typ. output characteristics 200 180 160 140 120 100 [ Typ. transfer characteristics 120 100 [ Typ. drain-source on resistance Typ. forward transconductance 100 IPB081N06L3 G IPP084N06L3 100 150 I [ 100 I [A] D 200 150 ...

Page 6

... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode IPB081N06L3 G IPP084N06L3 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...

Page 7

... Avalanche characteristics 100 [µ Drain-source breakdown voltage -60 - [° Typ. gate charge 100 1000 16 Gate charge waveforms 100 140 180 IPB081N06L3 G IPP084N06L3 [nC] gate ate ...

Page 8

... PG-TO220-3 IPB081N06L3 G IPP084N06L3 G ...

Page 9

... PG-TO263 (D²-Pak) IPB081N06L3 G IPP084N06L3 G ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. IPB081N06L3 G IPP084N06L3 G ...

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