IPI80N04S3-H4 Infineon Technologies, IPI80N04S3-H4 Datasheet - Page 7

• Manufacturer Part Number: IPI80N04S3-H4
• Description: MOSFET N-CH 40V 80A TO262-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPI80N04S3-H4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 65µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 3900pF @ 25V
• Power - Max: 115W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.0
13 Typical avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
= f(T
= f(Q
800
700
600
500
400
300
200
100
12
10
0
8
6
4
2
0
25
0
j
)
gate
D
80 A
); I
20 A
40 A
DD
D
10
= 80 A pulsed
75
20
Q
T
gate
j
[°C]
[nC]
30
125
8 V
40
32 V
175
50
page 7
14 Typ. drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
Q
V
55
50
45
40
35
30
V
g (th)
g s(th)
-60
GS
= f(T
j
); I
Q
-20
IPI80N04S3-H4, IPP80N04S3-H4
g s
D
= 1 mA
20
Q
T
g
j
Q
60
[°C]
sw
Q
g d
IPB80N04S3-H4
100
140
2008-08-01
Q
gate
180