IPI80N04S3-H4 Infineon Technologies, IPI80N04S3-H4 Datasheet - Page 5

• Manufacturer Part Number: IPI80N04S3-H4
• Description: MOSFET N-CH 40V 80A TO262-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPI80N04S3-H4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 65µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 3900pF @ 25V
• Power - Max: 115W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
320
280
240
200
160
120
360
320
280
240
200
160
120
80
40
80
40
0
0
DS
GS
0
2
); T
); V
GS
j
j
10 V
DS
= 25 °C; SMD
3
= 6V
2
4
V
V
DS
GS
4
5
[V]
[V]
6
6
-55 °C
7
175 °C
25 °C
7 V
6.5 V
5.5 V
6 V
5 V
page 5
8
8
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
20
18
16
14
12
10
7
6
5
4
3
2
8
6
4
2
-60
= f(I
= f(T
0
D
j
); T
); I
GS
-20
20
D
IPI80N04S3-H4, IPP80N04S3-H4
j
= 25 °C; SMD
= 80 A; V
20
40
T
GS
I
j
D
60
60
[°C]
= 10 V; SMD
[A]
5.5 V
IPB80N04S3-H4
100
80
140
100
2008-08-01
6.5 V
10 V
6 V
7 V
120
180