IPI80N06S2L-11 Infineon Technologies, IPI80N06S2L-11 Datasheet - Page 7

• Manufacturer Part Number: IPI80N06S2L-11
• Description: MOSFET N-CH 55V 80A TO262-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPI80N06S2L-11

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 93µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2075pF @ 25V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 13 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 32 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000218176

Rev. 1.1
13 Typical avalanche energy
E
parameter: I
15 Typ. drain-source breakdown voltage
V
AS
BR(DSS)
300
250
200
150
100
= f(T
50
0
66
64
62
60
58
56
54
52
50
48
46
25
-60
= f(T
j
)
D
j
); I
= 80A
-20
D
= 1 mA
75
20
T
T
j
j
60
[°C]
[°C]
125
100
140
180
175
page 7
14 Typ. gate charge
V
16 Gate charge waveforms
GS
V
V
= f(Q
GS
GS
12
10
8
6
4
2
0
0
gate
Q
Q
gs
gs
); I
IPP80N06S2L-11, IPI80N06S2L-11
D
= 80 A pulsed
20
Q
Q
g
g
Q
Q
Q
gate
gd
gd
[nC]
40
IPB80N06S2L-11
Q
Q
11 V
gate
gate
2010-10-26
60
44 V