IPI80N06S2L-11 Infineon Technologies, IPI80N06S2L-11 Datasheet - Page 5

• Manufacturer Part Number: IPI80N06S2L-11
• Description: MOSFET N-CH 55V 80A TO262-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPI80N06S2L-11

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 93µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2075pF @ 25V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 13 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 32 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000218176

Rev. 1.1
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
300
250
200
150
100
160
140
120
100
50
80
60
40
20
0
0
DS
GS
0
1
); T
); V
10 V
GS
j
j
DS
= 25 °C
= 6V
2
2
4
175 °C
V
V
DS
GS
25 °C
3.5 V
3 V
2.5 V
[V]
[V]
4 V
6
-55 °C
3
8
page 5
10
4
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. Forward transconductance
g
parameter: g
fs
DS(on)
= f(I
150
100
15
13
11
50
9
7
0
= (I
D
); T
0
0
D
); T
j
= 25°C
fs
GS
IPP80N06S2L-11, IPI80N06S2L-11
20
j
= 25 °C
50
40
I
I
D
D
100
60
[A]
[A]
IPB80N06S2L-11
80
150
100
2010-10-26
4.5 V
10 V
4 V
120
200