BSO303SP H Infineon Technologies, BSO303SP H Datasheet - Page 2

• Manufacturer Part Number: BSO303SP H
• Description: MOSFET P-CH 30V 7.2A 8DSO
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO303SP H

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 9.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.2A
• Vgs(th) (max) @ Id: 2V @ 100µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 2330pF @ 25V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Package: SO-8
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 21.0 mOhm
• Rds (on) (max) (@4.5v): 31.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.1
1)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Drain-source on-state resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJS
thJA
DS(on)
DS(on)
minimal footprint,
t
minimal footprint,
steady state
6 cm
t
6 cm
steady state
V
V
I
V
T
V
T
V
V
I
V
|V
I
p
p
D
D
D
page 2
≤10 s
≤10 s
j
j
GS
DS
DS
DS
GS
GS
GS
=-100 µA
=25 °C
=150 °C
=-7.8 A
=-7.3 A
DS
=V
=-30 V, V
=-30 V, V
=0 V, I
=-20 V, V
=-4.5 V,
=-10 V, I
|>2|I
2
2
cooling area
cooling area
GS
,
D
2
|R
D
(one layer, 70 µm thick) copper area for drain
=-250µA
D
DS(on)max
GS
GS
DS
=-9.1 A
=0 V,
=0 V,
=0 V
1)
1)
,
,
,
min.
-30
12
-1
-
-
-
-
-
-
-
-
-
-
Values
typ.
-1.5
-0.1
-10
22
15
19
-
-
-
-
-
-
-
BSO303SP H
max.
-100
-100
110
150
35
50
80
31
21
-2
-1
-
-
Unit
K/W
V
µA
nA
mΩ
S
2010-05-12