AO4447 Alpha & Omega Semiconductor Inc, AO4447 Datasheet - Page 4

• Manufacturer Part Number: AO4447
• Description: MOSFET P-CH -30V -15A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4447

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 1.6V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 6600pF @ 15V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1034-2

AO4447
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
100.0
0.01
8
6
4
2
0
10.0
0.1
10
1.0
0.1
0.00001
1
0
0.1
V
I
R
limited
T
T
D
D=T
T
R
DS
J(Max)
A
=-15A
DS(ON)
J,PK
θJA
=25°C
Figure 9: Maximum Forward Biased Safe
=-15V
=40°C/W
Figure 7: Gate-Charge Characteristics
on
=T
=150°C
20
/T
A
+P
0.0001
Operating Area (Note E)
DM
.Z
1s
θJA
1
40
.R
10s
-Q
θJA
-V
g
DS
(nC)
(Volts)
0.001
Figure 11: Normalized Maximum Transient Thermal Impedance
60
0.1s
DC
10ms
1ms
100µs
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
80
0.01
10µs
Single Pulse
100
Pulse Width (s)
100
0.1
8000
7000
6000
5000
4000
3000
2000
1000
100
80
60
40
20
0
0.001
0
0
Figure 10: Single Pulse Power Rating Junction-to-
1
0.01
Figure 8: Capacitance Characteristics
5
C
rss
P
D
0.1
T
10
on
Ambient (Note E)
Pulse Width (s)
10
T
-V
DS
1
C
15
(Volts)
oss
C
iss
10
100
20
T
T
J(Max)
A
=25°C
=150°C
100
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25
1000
1000
30