AO4447 Alpha & Omega Semiconductor Inc, AO4447 Datasheet - Page 3

• Manufacturer Part Number: AO4447
• Description: MOSFET P-CH -30V -15A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4447

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 1.6V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 6600pF @ 15V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1034-2

AO4447
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12
10
8
6
30
25
20
15
10
60
50
40
30
20
10
5
0
0
0
2
0
Figure 3: On-Resistance vs. Drain Current and Gate
Figure 5: On-Resistance vs. Gate-Source Voltage
5
1
Fig 1: On-Region Characteristics
-3.5V
4
-4V
V
GS
-10V
10
=-4V
2
-V
-V
Voltage
-I
DS
GS
D
(A)
(Volts)
6
(Volts)
15
25°C
3
I
V
D
V
=-15A
GS
GS
=-10V
=-2.5V
8
-3V
20
4
125°C
10
25
5
1.6
1.4
1.2
0.8
0.6
25
20
15
10
1.0E+01
1.0E+00
1
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
5
0
-50
1
Figure 4: On-Resistance vs. Junction Temperature
-25
0.0
V
DS
=-5V
Figure 2: Transfer Characteristics
0
Figure 6: Body-Diode Characteristics
1.5
0.2
125°C
25
Temperature (°C)
50
-V
125°C
0.4
GS
-V
(Volts)
V
I
2
SD
D
75
GS
=-13A
(Volts)
=-4V
100 125 150 175
0.6
25°C
25°C
V
I
2.5
D
GS
=-15A
=-10V
0.8
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1.0
3