AO4447 Alpha & Omega Semiconductor Inc, AO4447 Datasheet - Page 2

• Manufacturer Part Number: AO4447
• Description: MOSFET P-CH -30V -15A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4447

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 1.6V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 6600pF @ 15V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1034-2

AO4447
Alpha & Omega Semiconductor, Ltd.
A: The value of R
T
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
T
F.The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles such that Tj(start)=25C for each pulse.
Rev6: Jan 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
Q
t
t
t
t
t
Q
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
FS
GS(th)
SD
A
A
DS(ON)
iss
oss
rss
g
g
g
gs
gd
rr
=25°C. The SOA curve provides a single pulse rating.
(4.5V)
=25°C. The value in any given application depends on the user's specific board design.
DSS
θJA
is the sum of the thermal impedence from junction to lead R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
θJA
is measured with the device mounted on 1in
Parameter
J
=25°C unless otherwise noted)
2
Conditions
I
V
V
V
V
V
V
V
I
V
V
V
V
R
I
FR-4 board with 2oz. Copper, in a still air environment with
D
S
F
F
2
DS
DS
DS
GS
GS
GS
DS
GS
GS
GS
GS
=-15A, dI/dt=100A/µs
=-15A, dI/dt=100A/µs
=-1A,V
GEN
=-250µA, V
FR-4 board with 2oz. Copper, in a still air environment with
=-30V, V
=0V, V
=V
=-10V, V
=-10V, I
=-4V, I
=-5V, I
=0V, V
=0V, V
=-10V, V
=-10V, V
=3Ω
GS
θJL
GS
I
and lead to ambient.
D
GS
D
D
DS
DS
=0V
=-250µA
=-13A
=-15A
D
GS
DS
DS
DS
=±20V
=-15V, f=1MHz
=0V, f=1MHz
=-15A
GS
=0V
=-5V
=-15V, I
=-15V, R
=0V
D
L
=-15A
T
=1.7Ω,
T
J
=125°C
J
=55°C
Min
-0.9
-30
-60
-1.25
-0.69
5500
88.8
45.2
10.1
19.4
11.5
46.6
67.7
Typ
745
473
100
6.7
9.4
9.2
3.1
60
12
40
6600
Max
-1.6
±10
120
-10
7.5
5.5
12
12
60
60
-1
-1
www.aosmd.com
4
Units
mΩ
mΩ
µA
µA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
A
S
V
A