MTD5P06VT4G ON Semiconductor, MTD5P06VT4G Datasheet - Page 6

• Manufacturer Part Number: MTD5P06VT4G
• Description: MOSFET P-CH 60V 5A DPAK
• Manufacturer: ON Semiconductor

Specifications of MTD5P06VT4G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 40W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.45 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.6 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2100 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MTD5P06VT4GOS; MTD5P06VT4GOS; MTD5P06VT4GOSTR

100
0.1
10
1
0.1
0.01
1.0
0.1
V
SINGLE PULSE
T
1.0E−05
C
GS
Figure 11. Maximum Rated Forward Biased
= 25°C
= 20 V
D = 0.5
0.1
0.2
V
SINGLE PULSE
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Safe Operating Area
1
0.01
0.02
1.0E−04
0.05
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
100 ms
LIMIT
1 ms
Figure 14. Diode Reverse Recovery Waveform
10
I
S
10 ms
1.0E−03
SAFE OPERATING AREA
Figure 13. Thermal Response
dc
t
p
http://onsemi.com
MTD5P06V
100
di/dt
t, TIME (s)
t
a
6
1.0E−02
t
rr
t
140
120
100
b
I
80
60
40
20
S
P
0
(pk)
0.25 I
25
DUTY CYCLE, D = t
Figure 12. Maximum Avalanche Energy versus
S
t
1
t
T
2
50
J
1.0E−01
, STARTING JUNCTION TEMPERATURE (°C)
Starting Junction Temperature
TIME
1
75
/t
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
100
(t) = r(t) R
− T
1.0E+00
C
= P
125
qJC
(pk)
1
R
qJC
(t)
150
I
D
= 5 A
1.0E+01
175