MTD5P06VT4G ON Semiconductor, MTD5P06VT4G Datasheet - Page 3

• Manufacturer Part Number: MTD5P06VT4G
• Description: MOSFET P-CH 60V 5A DPAK
• Manufacturer: ON Semiconductor

Specifications of MTD5P06VT4G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 40W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.45 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.6 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2100 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MTD5P06VT4GOS; MTD5P06VT4GOS; MTD5P06VT4GOSTR

0.55
0.45
0.35
0.25
0.6
0.5
0.4
0.3
0.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
10
8
6
4
2
0
1
−50
0
1
Figure 3. On−Resistance versus Drain Current
T
V
I
D
J
GS
V
= 25°C
= 2.5 A
−25
GS
Figure 5. On−Resistance Variation with
1
= 10 V
2
Figure 1. On−Region Characteristics
= 10 V
V
V
DS
GS
2
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
3
0
T
= 10V
J
, JUNCTION TEMPERATURE (°C)
I
D
, DRAIN CURRENT (AMPS)
25
and Temperature
3
4
Temperature
50
4
T
5
J
= 100°C
9 V
25°C
− 55°C
75
5
TYPICAL ELECTRICAL CHARACTERISTICS
6
8 V
100
6
7
125
7
8
http://onsemi.com
150
5 V
4 V
7 V
6 V
8
9
MTD5P06V
175
10
9
3
0.35
0.25
100
0.4
0.3
0.2
10
10
9
8
7
6
5
4
3
2
1
0
1
1
0
2
Figure 4. On−Resistance versus Drain Current
T
V
V
J
GS
DS
= 25°C
= 0 V
2
≥ 10 V
Figure 6. Drain−To−Source Leakage
Figure 2. Transfer Characteristics
10
V
3
V
DS
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
3
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Current versus Voltage
I
D
, DRAIN CURRENT (AMPS)
20
and Gate Voltage
4
4
V
T
GS
5
J
= 125°C
= 10 V
15 V
30
5
6
T
J
25°C
= −55°C
40
6
7
8
50
7
100°C
9
10
60
8