MTD5P06VT4G ON Semiconductor, MTD5P06VT4G Datasheet

MTD5P06VT4G

Manufacturer Part Number

MTD5P06VT4G

Description

MOSFET P-CH 60V 5A DPAK

Manufacturer

ON Semiconductor

Datasheet

1.MTD5P06VT4G.pdf (7 pages)

Specifications of MTD5P06VT4G

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

450 mOhm @ 2.5A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

20nC @ 10V

Input Capacitance (ciss) @ Vds

510pF @ 25V

Power - Max

40W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.45 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

3.6 S

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 15 V

Continuous Drain Current

5 A

Power Dissipation

2100 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MTD5P06VT4GOS
MTD5P06VT4GOS
MTD5P06VT4GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MTD5P06VT4G

Manufacturer:

DIODES

Quantity:

43 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MTD5P06VT4G

Manufacturer:

Quantity:

12 500

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MTD5P06VT4G

Manufacturer:

ON SEMICONDUCTOR

Quantity:

30 000

Current page: 1 of 7
Download datasheet (76Kb)

MTD5P06V

Power MOSFET

5 Amps, 60 Volts P−Channel DPAK

avalanche and commutation modes. Designed for low voltage, high

speed switching applications in power supplies, converters and power

motor controls, these devices are particularly well suited for bridge

circuits where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected voltage

transients.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using the minimum recommended

2. When surface mounted to an FR−4 board using the 0.5 sq in drain pad size.

July, 2006 − Rev. 6

MAXIMUM RATINGS

Drain−to−Source Voltage

Drain−to−Gate Voltage (R

Gate−to−Source Voltage

− Continuous

− Non−repetitive (t

Drain Current − Continuous @ 25°C

Total Power Dissipation @ 25°C

Derate above 25°C

Total Power Dissipation @ T

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

Thermal Resistance

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 seconds

This Power MOSFET is designed to withstand high energy in the

Avalanche Energy Specified

Pb−Free Packages are Available

pad size.

= 5 Apk, L = 10 mH, R

DSS

Junction−to−Case

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

= 25 Vdc, V

and V

DS(on)

− Continuous @ 100°C

− Single Pulse (t

Rating

≤ 10 ms)

= 10 Vdc, Peak

= 25°C

Specified at Elevated Temperature

= 25 W)

= 25°C unless otherwise noted)

= 1.0 MW)

Preferred Device

= 25°C (Note 2)

≤ 10 ms)

Symbol

GSM

DGR

, T

DSS

qJC

qJA

stg

−55 to

Value

± 15

± 25

0.27

3.75

71.4

175

125

100

260

2.1

W/°C

°C/W

Unit

Vdc

Vpk

Adc

Apk

°C

†For information on tape and reel specifications,

Preferred devices are recommended choices for future use

and best overall value.

MTD5P06V

MTD5P06VT4

MTD5P06VT4G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1 2

(BR)DSS

Device

60 V

ORDERING INFORMATION

5P06V = Device Code

http://onsemi.com

CASE 369C

STYLE 2

(Pb−Free)

DPAK

Package

= Year

= Work Week

= Pb−Free Package

P−Channel

DS(on)

DPAK

340 mW

Publication Order Number:

TYP

Gate

2500/Tape & Reel

MARKING

DIAGRAM

75 Units/Rail

Drain

Shipping

MTD5P06V/D

5.0 A

Source

MAX

†

Related parts for MTD5P06VT4G

MTD5P06VT4G Summary of contents

Page 1

... T 260 L Device MTD5P06V MTD5P06VT4 MTD5P06VT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( Vdc 0.25 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 10V 25° DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0 ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

TOTAL GATE CHARGE (nC) g Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE ...

Page 6

SINGLE PULSE T = 25° 100 LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward ...

Page 7

... G 0.13 (0.005) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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