NDD02N60ZT4G ON Semiconductor, NDD02N60ZT4G Datasheet - Page 5
![MOSFET N-CH 600V DPAK](/photos/5/51/55181/488-d-pak_sml.jpg)
NDD02N60ZT4G
Manufacturer Part Number
NDD02N60ZT4G
Description
MOSFET N-CH 600V DPAK
Manufacturer
ON Semiconductor
Datasheet
1.NDF02N60ZG.pdf
(10 pages)
Specifications of NDD02N60ZT4G
Package / Case
DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
Mounting Type
Surface Mount
Power - Max
57W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
10.1nC @ 10V
Vgs(th) (max) @ Id
4.5V @ 50µA
Current - Continuous Drain (id) @ 25° C
2.2A
Drain To Source Voltage (vdss)
600V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.8 Ohm @ 1A, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4 Ohms
Forward Transconductance Gfs (max / Min)
1.7 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
1.4 A
Power Dissipation
57 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Gate Charge Qg
10.1 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDD02N60ZT4G
Manufacturer:
ON
Quantity:
2 500
Company:
Part Number:
NDD02N60ZT4G
Manufacturer:
ON Semiconductor
Quantity:
1 900
Company:
Part Number:
NDD02N60ZT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NDD02N60ZT4G
Manufacturer:
ON/安森美
Quantity:
20 000
0.01
100
0.1
0.01
100
10
0.01
0.1
0.1
10
1
1E−06
1E−06
10
1
0.1
1
Figure 12. Maximum Rated Forward Biased
50% (DUTY CYCLE)
5.0%
2.0%
1.0%
20%
10%
V
SINGLE PULSE
T
50% (DUTY CYCLE)
20%
10%
5%
2%
C
GS
1%
SINGLE PULSE
= 25°C
V
v 30 V
SINGLE PULSE
Safe Operating Area NDD02N60Z
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1E−05
1E−05
1
Figure 15. Thermal Impedance (Junction−to−Ambient) for NDD02N60Z
Figure 14. Thermal Impedance (Junction−to−Case) for NDD02N60Z
1E−04
1E−04
10
10 ms
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
dc
1 ms
100 ms
LIMIT
1E−03
1E−03
TYPICAL CHARACTERISTICS
100
10 ms
http://onsemi.com
1E−02
1E−02
PULSE TIME (s)
PULSE TIME (s)
1000
5
0.01
100
0.1
10
1E−01
1E−01
1
0.1
Figure 13. Maximum Rated Forward Biased
V
SINGLE PULSE
T
GS
C
= 25°C
V
v 30 V
Safe Operating Area NDF02N60Z
DS
1E+00
1E+00
, DRAIN−TO−SOURCE VOLTAGE (V)
1
1E+01
1E+01
dc
10
10 ms
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
1 ms
R
Steady State
R
Steady State
LIMIT
qJC
qJA
100 ms
1E+02
1E+02
= 2.2°C/W
= 41°C/W
100
10 ms
1E+03
1E+03
1000