NDD02N60ZT4G ON Semiconductor, NDD02N60ZT4G Datasheet - Page 2

• Manufacturer Part Number: NDD02N60ZT4G
• Description: MOSFET N-CH 600V DPAK
• Manufacturer: ON Semiconductor

Specifications of NDD02N60ZT4G

• Package / Case: DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
• Mounting Type: Surface Mount
• Power - Max: 57W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 10.1nC @ 10V
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Drain To Source Voltage (vdss): 600V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 Ohms
• Forward Transconductance Gfs (max / Min): 1.7 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 57 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 10.1 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
THERMAL RESISTANCE
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
DYNAMIC CHARACTERISTICS
RESISTIVE SWITCHING CHARACTERISTICS
SOURCE−DRAIN DIODE CHARACTERISTICS (T
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Drain−to−Source Leakage Current
Gate−to−Source Forward Leakage
Static Drain−to−Source
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Plateau Voltage
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Coefficient
On−Resistance
Characteristic
Parameter
(T
V
V
J
DD
DS
= 25°C unless otherwise noted)
= 300 V, I
I
S
= 600 V, V
V
V
V
V
V
V
V
V
= 2.4 A, di/dt = 100 A/ms
V
DD
I
DD
DS
C
S
DS
GS
Reference to 25°C,
GS
DS
GS
GS
Test Conditions
= 2.4 A, V
= 25°C unless otherwise noted)
= 300 V, I
= 300 V, I
= 25 V, V
= V
= 0 V, V
V
= 10 V, I
= 15 V, I
= 10 V, R
f = 1.0 MHz
= 0 V, I
V
I
GS
(Note 3) NDD02N60Z−1
D
GS
D
GS
http://onsemi.com
= 1 mA
(Note 4) NDD02N60Z
(Note 3) NDP02N60Z
(Note 3) NDF02N60Z
GS
= 2.4 A, V
= ±20 V
= 10 V
, I
D
D
DD
= 0 V
D
D
GS
D
D
GS
= 1 mA
G
= 50 mA
= 1.0 A
= 1.2 A
= 2.4 A,
= 2.4 A,
= 30 V
= 0 V
= 5 W
= 0 V,
NDD02N60Z
NDP02N60Z
NDF02N60Z
2
OS
= 10 V
150°C
25°C
DBV
Symbol
Symbol
R
V
BV
R
t
t
R
I
C
I
DS(on)
DT
GS(th)
C
C
V
V
g
Q
Q
d(on)
d(off)
GSS
DSS
Q
Q
R
qJC
qJA
t
oss
t
FS
rss
GP
t
SD
DSS
iss
rr
gs
gd
r
f
DSS
g
g
rr
J
/
Min
600
3.0
Value
10.1
Typ
274
240
1.7
5.2
2.2
0.6
4.0
1.7
7.0
2.4
5.3
6.4
4.9
9.0
7.0
7.0
0.7
51
51
41
80
34
15
Max
±10
4.8
4.5
1.6
50
1
°C/W
V/°C
Unit
Unit
mA
mA
pF
nC
mC
ns
ns
W
W
V
V
S
V
V