NDD02N60ZT4G ON Semiconductor, NDD02N60ZT4G Datasheet - Page 4

• Manufacturer Part Number: NDD02N60ZT4G
• Description: MOSFET N-CH 600V DPAK
• Manufacturer: ON Semiconductor

Specifications of NDD02N60ZT4G

• Package / Case: DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
• Mounting Type: Surface Mount
• Power - Max: 57W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 10.1nC @ 10V
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Drain To Source Voltage (vdss): 600V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 Ohms
• Forward Transconductance Gfs (max / Min): 1.7 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 57 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 10.1 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
0.10
100
1.0
1.0
10
10
1
0
Figure 10. Resistive Switching Time Variation
Figure 7. Drain−to−Source Leakage Current
V
V
50 100 150 200 250 300 350 400 450 500 550 600
DD
I
D
GS
= 2.4 A
V
= 300 V
= 10 V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R
versus Gate Resistance
G
, GATE RESISTANCE (W)
versus Voltage
T
T
J
J
= 150°C
= 125°C
15.0
14.0
13.0
12.0
10.0
11.0
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
Drain−to−Source Voltage versus Total Charge
Q
1
GS
Figure 9. Gate−to−Source Voltage and
TYPICAL CHARACTERISTICS
2
Q
g
, TOTAL GATE CHARGE (nC)
V
3
t
t
t
t
d(off)
DS
r
d(on)
f
http://onsemi.com
4
100
Q
Q
5
GD
T
4
6
10.0
600
550
500
450
400
350
300
250
200
150
100
1.0
0.1
50
7
0
0.3
0
C
8
V
rss
V
Figure 11. Diode Forward Voltage versus
T
0.4
5
GS
I
DS
D
J
V
V
= 2.4 A
= 25°C
9
= 300 V
DS
SD
T
Figure 8. Capacitance Variation
10
J
0.5
, DRAIN−TO−SOURCE VOLTAGE (V)
, SOURCE−TO−DRAIN VOLTAGE (V)
C
= 150°C
10
oss
15
0.6
11
C
350
300
250
200
150
100
50
0
125°C
iss
20
Current
0.7
25
25°C
0.8
30
−55°C
0.9
35
1.0
V
T
f = 1 MHz
40
J
GS
= 25°C
= 0 V
1.1
45
50
1.2