IPB22N03S4L-15 Infineon Technologies, IPB22N03S4L-15 Datasheet - Page 9

• Manufacturer Part Number: IPB22N03S4L-15
• Description: MOSFET N-CH 30V 22A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB22N03S4L-15

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.6 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 2.2V @ 10µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 980pF @ 25V
• Power - Max: 31W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14.6 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 22 A
• Power Dissipation: 31 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB22N03S4L-15; IPB22N03S4L-15INTR; SP000275308

IPB22N03S4L-15
IPI22N03S4L-15, IPP22N03S4L-15
Revision History
Version
Date
Changes
Rev. 2.0
page 9
2007-03-09