IPB22N03S4L-15 Infineon Technologies, IPB22N03S4L-15 Datasheet - Page 4

• Manufacturer Part Number: IPB22N03S4L-15
• Description: MOSFET N-CH 30V 22A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB22N03S4L-15

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.6 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 2.2V @ 10µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 980pF @ 25V
• Power - Max: 31W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14.6 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 22 A
• Power Dissipation: 31 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB22N03S4L-15; IPB22N03S4L-15INTR; SP000275308

Rev. 2.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
= f(V
= f(T
100
35
30
25
20
15
10
10
5
0
1
0.1
DS
0
C
); T
); V
p
C
GS
= 25 °C; D = 0, SMD
≥ 6 V
50
1
T
V
C
DS
100
[°C]
1 ms
[V]
100 µs
10
150
10 µs
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
= f(T
24
22
20
18
16
14
12
10
10
10
= f(t
10
10
8
6
4
2
0
-1
-2
1
0
C
0
); V
p
0.5
)
single pulse
0.01
0.1
0.05
GS
IPI22N03S4L-15, IPP22N03S4L-15
≥ 6 V; SMD
p
/T
50
T
t
C
100
p
[°C]
[s]
IPB22N03S4L-15
150
2007-03-09
200