BSP170P L6327 Infineon Technologies, BSP170P L6327 Datasheet - Page 7

• Manufacturer Part Number: BSP170P L6327
• Description: MOSFET P-CH 60V 1.9A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP170P L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 410pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSP170P L6327; BSP170PL6327INTR; BSP170PL6327XT; SP000089225

Rev 2.52
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
10
10
70
65
60
55
50
AV
-1
1
0
-60
=f(T
10
); R
0
j
GS
); I
j(start)
=25 Ω
-20
D
=-250 µA
10
1
20
T
t
AV
j
10
[°C]
[µs]
2
60
125 °C
100 °C
100
10
3
25 °C
140
10
page 7
4
14 Typ. gate charge
V
parameter: V
GS
=f(Q
16
14
12
10
8
6
4
2
0
0
gate
); I
DD
D
=-1.9 A pulsed
5
Q
12 V
gate
[nC]
30 V
10
48 V
BSP 170 P
2009-02-16
15